Identicalness of diodes in terms of forward voltage loss in the diode matrices
Abstract
Technical problems in the production of diode devices with identical forward voltage loss in the diode matrices are examined. Previous efforts at producing such diodes are reviewed, technological factors which may determine the forward voltage loss are considered, and the effects of these factors are analyzed. The factors considered include the selection of starting materials, processing time and temperature, and variations in impurity concentration. Experimental data are presented which show that the magnitude of forward voltage loss depends on three properties of the p-n junction as well as operating temperature and forward current.
- Publication:
-
Akademiia Nauk Azerbaidzhanskoi SSR Izvestiia Seriia Fiziko Tekhnicheskikh i Matematicheskikh Nauk
- Pub Date:
- 1976
- Bibcode:
- 1976IzAze...1...18I
- Keywords:
-
- Crystal Growth;
- Diffusion Coefficient;
- Electric Potential;
- Junction Diodes;
- Microelectronics;
- P-N Junctions;
- Silicon Transistors;
- Twinning;
- Doped Crystals;
- Recombination Coefficient;
- Semiconductor Devices;
- Electronics and Electrical Engineering