Radiation effects modeling and experimental data on IIL devices
Abstract
Integrated Injection Logic (IIL) radiation effects model including radiation effects phenomena are reported. Twenty-five individual current components were identified for an IIL logic gate by assuming wholly vertical or wholly horizontal current flow. Equations were developed for each component in terms of doping profiles, distances, and diffusion lengths, and set up on a computer for specific logic cell configurations. For neutron damage, the model shows excellent agreement with experimental data. Significant hardness improvements were achieved by: (1) diffusion profile variation, (2) utilizing a tight N(+) collar around the cell, and (3) locating the collector close to the injector. Flash X-ray tests showed a transient logic upset threshold of 1 Grad (Si)/sec for a 28 ns pulse, and a survival level greater than 2 Trad (Si)/sec.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1976
- DOI:
- 10.1109/TNS.1976.4328564
- Bibcode:
- 1976ITNS...23.1697L
- Keywords:
-
- Carrier Injection;
- Gates (Circuits);
- Integrated Circuits;
- Logical Elements;
- Radiation Effects;
- Computer Programs;
- Current Distribution;
- Logic Circuits;
- Mathematical Models;
- Neutron Irradiation;
- Pulse Duration;
- Semiconductor Junctions;
- Electronics and Electrical Engineering