Radiation effects modeling and experimental data on IIL devices
Abstract
Integrated Injection Logic (IIL) radiation effects model including radiation effects phenomena are reported. Twentyfive individual current components were identified for an IIL logic gate by assuming wholly vertical or wholly horizontal current flow. Equations were developed for each component in terms of doping profiles, distances, and diffusion lengths, and set up on a computer for specific logic cell configurations. For neutron damage, the model shows excellent agreement with experimental data. Significant hardness improvements were achieved by: (1) diffusion profile variation, (2) utilizing a tight N(+) collar around the cell, and (3) locating the collector close to the injector. Flash Xray tests showed a transient logic upset threshold of 1 Grad (Si)/sec for a 28 ns pulse, and a survival level greater than 2 Trad (Si)/sec.
 Publication:

IEEE Transactions on Nuclear Science
 Pub Date:
 December 1976
 DOI:
 10.1109/TNS.1976.4328564
 Bibcode:
 1976ITNS...23.1697L
 Keywords:

 Carrier Injection;
 Gates (Circuits);
 Integrated Circuits;
 Logical Elements;
 Radiation Effects;
 Computer Programs;
 Current Distribution;
 Logic Circuits;
 Mathematical Models;
 Neutron Irradiation;
 Pulse Duration;
 Semiconductor Junctions;
 Electronics and Electrical Engineering