Effects of defects and impurities in starting material on radiation hardness of CMOS/SOS devices
Abstract
Some of the relationships between defects and impurities in SOS starting materials and the radiation hardness of CMOS/SOS devices have been investigated. It is shown that a direct correlation exists between contaminants in the epitaxial silicon film and the radiation-induced back-channel leakage currents. Radiation-induced shifts in device threshold voltage were observed, but these shifts appeared to be more closely related to variations in device processing than to silicon film contamination.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1976
- DOI:
- Bibcode:
- 1976ITNS...23.1594P
- Keywords:
-
- Crystal Defects;
- Impurities;
- Metal Oxide Semiconductors;
- Radiation Damage;
- Radiation Hardening;
- Sos (Semiconductors);
- Component Reliability;
- Contamination;
- Electrical Insulation;
- Epitaxy;
- Semiconducting Films;
- Silicon;
- Threshold Voltage;
- Electronics and Electrical Engineering