Noise effects in bipolar junction transistors at cryogenic temperatures. I, II
Abstract
The article investigates the noise behavior of bipolar junction transistors (BJT) at cryogenic temperatures, locating an additional noise source within the BJT model in the region below 110 K. This source is attributed to effects of fluctuations in the number of partially ionized impurities, a generation-recombination process acting mainly in the vicinity of the BJT base region. Reasons for BJT device performance degradation at low temperatures, mainly a decrease in current gain and minority-carrier lifetime with temperature, are listed. The additional generation-recombination noise effects become aggravated with quiescent bias, and cancel the advantages of reduced thermal noise at low temperatures. The measured activation energies fall within the expected range for silicon p-n-p devices.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1976
- DOI:
- Bibcode:
- 1976ITED...23..998W
- Keywords:
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- Bipolar Transistors;
- Cryogenics;
- Junction Transistors;
- Noise Reduction;
- Thermal Noise;
- Activation Energy;
- Carrier Lifetime;
- Electron Recombination;
- Equivalent Circuits;
- Low Temperature Tests;
- P-N-P Junctions;
- Silicon Junctions;
- Temperature Effects;
- Electronics and Electrical Engineering