CuInS2 Liquid Junction Solar Cells
Abstract
Substantial improvement in the reproducibility of extremely efficient S-band TRAPATT diodes is shown to result from sputtering layers of silicon oxynitride onto the exposed surfaces of the mesa diodes. The sputtered layers stabilize the device against changes in dc current-voltage characteristics induced by the TRAPATT mode.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1976
- DOI:
- 10.1149/1.2131560
- Bibcode:
- 1976ITED...23..519K
- Keywords:
-
- Avalanche Diodes;
- Interface Stability;
- Power Efficiency;
- Sputtering;
- Trapatt Devices;
- Volt-Ampere Characteristics;
- Microwave Amplifiers;
- Microwave Oscillators;
- Performance Tests;
- Superhigh Frequencies;
- Ultrahigh Frequencies;
- Electronics and Electrical Engineering