Freeze-out effects on n-channel MOSFET'S
Abstract
Surface admittance measurements have been carried out on (100) oriented 1-ohm-cm n-channel silicon MOSFET's in the freeze-out regime. The freeze-out temperature accurately determines the amount of compensation. Measurements at different frequencies yield different freeze-out temperatures which in turn are used to determine the acceptor level energy. Thus the admittance measurements in the freeze-out regime provide a useful tool for probing impurity levels that exist in the energy gap and identifying bulk impurities through surface measurements. A discrepancy between the measured acceptor level energy and the universally accepted one is shown to be due to a large stress that develops because of thermal mismatch between the substrate and the header.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1976
- DOI:
- 10.1109/T-ED.1976.18427
- Bibcode:
- 1976ITED...23..466A
- Keywords:
-
- Electrical Impedance;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- Temperature Effects;
- Axial Stress;
- Carrier Mobility;
- Freezing;
- Silicon Transistors;
- Thermal Stresses;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering