A new bipolar process - Borsenic
Abstract
A novel bipolar process, with arsenic emitters, has been developed. The base and the emitter are simultaneously diffused from an oxide source containing B2O3 and As2O3. Because of the slow diffusion of B in the presence of As, extremely shallow junctions have been obtained; n-p-n transistors with high h(FE), high breakdown, high f(T), and very little low current h(FE) falloff have been fabricated. Lateral p-n-p and p-channel JFETs have also been fabricated on the same chip without any extra processing step.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- August 1976
- DOI:
- Bibcode:
- 1976IJSSC..11..495S
- Keywords:
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- Bipolar Transistors;
- Boron Oxides;
- Fabrication;
- N-P-N Junctions;
- Thermal Diffusion;
- Electrical Faults;
- Field Effect Transistors;
- Junction Transistors;
- Production Engineering;
- Surface Diffusion;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering