Optimum load device for DMOS integrated circuits
Abstract
Depletion-mode load devices can be integrated with DMOS transistors without any extra diffusions or ion implantation processing steps by judicious choice of the substrate crystal orientation and resistivity. For low voltage operation line-type 1, 1, 1 crystal orientation should be used. The line-type 1, 1, 1 crystal orientation also yields a higher transconductance for the DMOS transistor than the line-type 1, 0, 0 orientation. The geometry of the load device and the DMOS transistor can be made ratioless to conserve area. Self-aligned gates, hitherto considered incompatible with DMOS transistors, have been incorporated in the structure. The experimental DMOS inverters, using a conservative design, have achieved 4-ns propagation delay, 1.3-V operation, and 2-pJ propagation delay-power dissipation product.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- August 1976
- Bibcode:
- 1976IJSSC..11..443L
- Keywords:
-
- Fabrication;
- Field Effect Transistors;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Volt-Ampere Characteristics;
- Crystal Structure;
- Electrical Resistivity;
- Frequency Response;
- Inverters;
- Load Tests;
- Optimization;
- Self Alignment;
- Substrates;
- Electronics and Electrical Engineering