Error minimization in the measurement of bipolar collector and emitter resistances
Abstract
An analysis of open-circuited collector and forced beta methods for emitter and collector resistance determination is presented. The analysis particularly focuses attention on high-injection effects and the influences of recombination within, and at the surface of, junction depletion layers. Semiquantitative criteria for minimization of measurement error evolve and additionally, methods for extraction of certain inverse and nonideal diode parameters are suggested.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1976
- DOI:
- 10.1109/JSSC.1976.1050721
- Bibcode:
- 1976IJSSC..11..318C
- Keywords:
-
- Bipolar Transistors;
- Electrical Resistance;
- Error Analysis;
- Impedance Measurement;
- Junction Transistors;
- Network Analysis;
- Carrier Injection;
- Electron Recombination;
- Emitters;
- Equivalent Circuits;
- Mathematical Models;
- Optimization;
- Performance Prediction;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering