Model parameters for the simulation of the switching characteristics of diode and transistor
Abstract
Large-signal and small-signal equivalent circuits for a diode and a transistor model are considered and the respective parameters are derived. The derivation of the parameters is based on the reported data concerning the device characteristics. The correctness of the computations is studied with the aid of a simulation involving the circuits used in the determination of the data.
- Publication:
-
Elektronika
- Pub Date:
- January 1976
- Bibcode:
- 1976Elek...25...71N
- Keywords:
-
- Diodes;
- Equivalent Circuits;
- Semiconductors (Materials);
- Switching Circuits;
- Transistor Circuits;
- Barrier Layers;
- Circuit Diagrams;
- Computerized Simulation;
- Dynamic Characteristics;
- Electronics and Electrical Engineering