Nonlinear dynamic model of a bipolar transistor for the ECAP program

A nonlinear dynamic model of bipolar transistors is developed for computerized solutions of electronic circuit design problems in LSI circuitry, following ECAP (electronic circuit analysis program) guidelines. Sensitivity analysis, worst-case analysis, and Monte Carlo methods are considered. A simple piecewise-linear approximation of the Ebers-Moll model in numerical analysis of transistorized pulsed switching circuits is proposed. Results are satisfactory when the emitter current dependence of transistor beta is weak, and when averaged parameters of static (low-sensitivity) elements of the model can be used over the entire emitter current range of interest.