Lambda diodes and lambda transistors - New negative-resistance field components

Recent developments in field-effect electronic components are reviewed: field diodes, field tunnel diodes, junction field effect transistors and insulated-gate (single-gate or two-gate) field effect transistors, lambda diodes, and lambda transistors. The design and performance of tunnel diodes and lambda diodes are compared. New graphical symbolisms are proposed for designation of lambda diodes and lambda transistors in circuit diagrams, with graphical distinctions between n-gate and p-gate negative-resistance lambda transistors. Lambda transistors are recommended as components in the design of alarm switches for low voltage levels in such products as tape recorders, portable radio and television sets, and clock radios. The use of lambda type negative-resistance diodes and transistors in static memory units (large-scale integrated CMOS) is also recommended.