Performance of self-oscillating GaAs M.E.S.F.E.T. mixers at X-band
Abstract
The present note describes the use of GaAs MESFET in the hitherto unreported self-oscillating mixer mode, with special emphasis on device construction and circuit design performance. The device - primarily intended for use as a low-noise amplifier - is made with a gate size of 200x0.8 micron on epitaxial material having a doping intensity of between 8 and 10 times 10 to the 16th per cu cm and a thickness of 0.15 to 0.2 micron. As a self-oscillating mixer, the MESFET has given up to 2 dB conversion gain and a noise figure of 15 dB at 10 GHz. This performance is believed to be superior to that of Gunn and IMPATT diodes as a self-oscillating mixer and makes the MESFET a serious contender to the baritt.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1976
- DOI:
- 10.1049/el:19760462
- Bibcode:
- 1976ElL....12..605H
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Mixing Circuits;
- Schottky Diodes;
- Self Oscillation;
- Integrated Circuits;
- Low Noise;
- Metal Surfaces;
- Microstrip Transmission Lines;
- Microwave Oscillators;
- Network Synthesis;
- Signal Mixing;
- Superhigh Frequencies;
- Electronics and Electrical Engineering