High-speed optoelectronic switching in silicon gap-shunt microstrip structures
Abstract
A new silicon microstrip device for high-speed optoelectronic switching and gating of d.c. or r.f. signals up to the gigahertz range, using a combined gap-shunt microstrip structure, is reported. The switching actions are achieved via laser-excited highly conductive solid-state plasmas.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1976
- DOI:
- 10.1049/el:19760332
- Bibcode:
- 1976ElL....12..437P
- Keywords:
-
- Electro-Optical Effect;
- Microstrip Devices;
- Semiconductor Devices;
- Silicon;
- Switching Circuits;
- High Speed;
- Laser Applications;
- Laser Plasmas;
- Time Response;
- Electronics and Electrical Engineering