Transistor transit-time oscillator /Translator/
Abstract
Operation of a novel junction-transistor structure as a microwave negative-resistance diode is described. Negative-resistances of -25 ohms at 10 GHz are predicted, corresponding to negative Q-factors of -5. Large-signal CW power outputs of the order of 1 W from individual devices are indicated. It is expected that device operation in the frequency range 1-100 GHz should be possible at voltage bias levels from 5 to 50 V.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1976
- DOI:
- Bibcode:
- 1976ElL....12...37W
- Keywords:
-
- Bipolar Transistors;
- Junction Diodes;
- Junction Transistors;
- Microwave Oscillators;
- Negative Resistance Devices;
- Continuous Radiation;
- Frequency Response;
- Q Factors;
- Transit Time;
- Electronics and Electrical Engineering