Determination of minority-carrier diffusion length in indium phosphide by surface photovoltage measurement
Abstract
The surface photovoltage technique has been employed to measure the hole diffusion length on three n-type InP specimens. The hole diffusion length was found to be 1.8 μm for specimens with (111) orientation and 1.4 μm for specimens with (100) orientation. The measured hole diffusion length was found to be independent of the surface conditions.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 1976
- DOI:
- 10.1063/1.88966
- Bibcode:
- 1976ApPhL..29..126L
- Keywords:
-
- Hole Mobility;
- Indium Phosphides;
- Minority Carriers;
- N-Type Semiconductors;
- Photovoltages;
- Particle Intensity;
- Photons;
- Single Crystals;
- Solid-State Physics;
- 72.20.Kw;
- 72.40.+w;
- 73.25.+i;
- Photoconduction and photovoltaic effects;
- Surface conductivity and carrier phenomena