Annealing procedure for self-scanned diode arrays
Abstract
Annealing of a self-scanned diode array by exposure to low-energy electrons (200 eV to 13 keV) was investigated as a technique for reversing radiation damage in solid state detectors of X-rays and energetic electrons. Both the initial damaged state and damage due to subsequent bombardment by 20 keV electrons were annealed out, under both illuminated and dark conditions, with the array operating or unbiased. Completion of the anneal can be observed with the array in operation, and shows up in all of the elements reaching the same signal level at saturation, or can be detected by removing the light and observing the dark signal. Seriously damaged arrays have been restored to a satisfactory performance level by the method. The arrays are components in image intensifiers employed in astronomical spectroscopy.
- Publication:
-
Applied Optics
- Pub Date:
- August 1976
- DOI:
- 10.1364/AO.15.001909
- Bibcode:
- 1976ApOpt..15.1909G
- Keywords:
-
- Annealing;
- Astronomical Spectroscopy;
- Electron Bombardment;
- Photodiodes;
- Radiation Damage;
- Radiation Detectors;
- Electron Energy;
- Image Intensifiers;
- Photocathodes;
- Silicon Dioxide;
- X Ray Astronomy;
- Electronics and Electrical Engineering