Reliability study of microwave power transistors

As the fineness of structure in microelectronics is stressed by the need for power in microwave transistors, the minimal amounts of material used in their construction are pushed to their limits. This work seeks to understand those limits for gold metallization and bonding, to verify the modelling experimentally, and to fit the data taken to a working guideline. It also seeks to relate accelerated data taken under normal conditions for more accurate reliability prediction.