Technology and physics of infrared and point contact diodes
Abstract
Background work for this contract performed by this laboratory has shown that the tunneling characteristics of junctions formed by a very thin dielectric layer surrounded by two metals is independent of frequency (from dc through 10 micrometer wavelength.) These junctions may be formed by a point contact on a lightly oxidized metal surface. Principal work done this period was construction of a mathematical model for an infrared antenna/diode combination and calculation of the expected operating parameters. A closed form analytical approximation was made and experimental checks on the model validity were started. An article based on this work will be prepared.
- Publication:
-
Massachusetts Inst. of Tech. Report
- Pub Date:
- September 1975
- Bibcode:
- 1975mit..reptS....J
- Keywords:
-
- Antennas;
- Infrared Instruments;
- Junction Diodes;
- Dielectrics;
- Electron Tunneling;
- Radiometers;
- Semiconductor Devices;
- Thin Films;
- Electronics and Electrical Engineering