Feasibility investigations of growing and characterizing gallium arsenide crystals in ribbon form
Abstract
Using a confined zone melting apparatus, sealed with boron oxide, single crystals of GaAs, 0.05 mm in thickness were sucessfully propagated with the same orientation as the seed crystal, for a distance of about 10 millimeters. Proposed modifications in system design offer good potential for producing longer and thinner single crystals. Economic analysis of gallium arsenide as a solar cell material suggests that a goal of $0.50/peak watt is achievable only with a concentrating system. Single crystal gallium arsenide cells, 50 micrometers in thickness, which have the potential for high efficiency, are economically favored over polycrystalline cells, which will almost certainly have lower efficiencies.
- Publication:
-
Quarterly Progress Report
- Pub Date:
- September 1975
- Bibcode:
- 1975ladi.reptQ....B
- Keywords:
-
- Crystal Growth;
- Gallium Arsenides;
- Boron Oxides;
- Graphite;
- Ribbons;
- Single Crystals;
- Solid-State Physics