GaAs-based integrated optical circuits
Abstract
The paper examines the development of waveguide components based on GaAs and related III-V compounds employed in integrated optical circuits for use in optical fiber communications and optical data processing. The devices examined include low-loss high-purity GaAs waveguides formed by vapor epitaxial growth, integrated InGaAs infrared detectors, electroabsorption detectors and modulators, integrated GaAs-AlGaAs double heterostructure lasers, and directional couplers.
- Publication:
-
Electro-optical Systems Design Conference and International Laser Exposition
- Pub Date:
- 1975
- Bibcode:
- 1975eosd.conf..453M
- Keywords:
-
- Electro-Optics;
- Gallium Arsenides;
- Integrated Circuits;
- Optical Communication;
- Optical Data Processing;
- Coupling Circuits;
- Electromagnetic Absorption;
- Epitaxy;
- Fiber Optics;
- Gallium Arsenide Lasers;
- Infrared Detectors;
- Microwave Coupling;
- Optical Fibers;
- Electronics and Electrical Engineering