Microwave InGaAs Schottky-barrier-gate field-effect transistors - Preliminary results
Abstract
The development of microwave In/x/Ga/1-x/As FETs is examined from the standpoint of transport effects on performance, material growth and properties, and packaging. FETs have been fabricated from several InGaAs wafers with In concentration in the range from 3.0 to 5.0%. The transistor geometry is a right-angled vee formed by two 1-micron long by 100-micron wide gates connected electrically in parallel. These devices have been tested by curve tracing, microwave network analyzer S- and Y-parameter measurement, and microwave amplifier measurements. It is shown that high Hall mobilities can be obtained in thin films of In/x/Ga/1-x/As grown directly on GaAs with x varying between 3.0 and 4.5%, that high effective velocities are obtained in thin-film resistors of In/x/Ga/1-x/As with x varying between 3.0 and 4.5% and threshold fields in the range 6-7 kV/cm, and that FETs fabricated from this material are very similar to GaAs FETs made from the same masks with the primary exception of much more favorable (lower) output conductance.
- Publication:
-
Active semiconductor devices for microwaves and integrated optics
- Pub Date:
- 1975
- Bibcode:
- 1975asdm.proc..305D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Microwave Amplifiers;
- Schottky Diodes;
- Electronic Equipment Tests;
- Epitaxy;
- Microelectronics;
- Transport Properties;
- Electronics and Electrical Engineering