Noise performance of gallium arsenide field-effect transistors
Abstract
Current noise theory of GaAs Schottky-barrier FET is outlined and used to assess the relative contributions to noise performance by sources both intrinsic and extrinsic to the FET. It is shown how these contributions depend on the various material and design parameters. A comparison is made between theoretical predictions and measured results. A summary is presented of the best noise performance obtained with FET devices and with cascade amplifiers employing them, as reported by various laboratories. Further improvements in noise performance should be possible with advances in the design and technology of contacts and achievement of steeper slopes in the doping profile at the substrate-channel interface.
- Publication:
-
Active semiconductor devices for microwaves and integrated optics
- Pub Date:
- 1975
- Bibcode:
- 1975asdm.proc..265P
- Keywords:
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- Electromagnetic Noise Measurement;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Schottky Diodes;
- Transistor Amplifiers;
- Electronic Equipment Tests;
- Linear Amplifiers;
- Power Amplifiers;
- Electronics and Electrical Engineering