An improved high temperature GaAs Schottky junction
Abstract
The paper describes a reliable, high-performance batch-processed GaAs-tantalum Schottky junction having native oxide (gallium oxide) passivation in a quasi-planar configuration. Of essential importance is the ability of the tantalum to withstand high temperatures (greater than 450 C) for long periods of time without significant interdiffusion of GaAs, gold, and tantalum. Junction passivation was achieved at about 40 C using a 30% H2O2 solution. Reproducible amorphous gallium oxide layers, ranging from 1000 to 2000 A in thickness, were achieved within 48 to 68 hours. Life tests on the Schottky junctions were performed in air ambient at 300 and 200 C for a total of 500 and 1400 hours, respectively, without a single failure. As a frequency doubler the Schottky junction has achieved greater than 10% efficiency and greater than 18 mW output power. As a tripler it has achieved an efficiency of 2% and an output power of 2 mW. As a mixer it has achieved a SSB noise figure of 6.5 dB and the ability to sustain energy greater than 3.0 ergs without any detectable degradation.
- Publication:
-
Active semiconductor devices for microwaves and integrated optics
- Pub Date:
- 1975
- Bibcode:
- 1975asdm.proc..165C
- Keywords:
-
- Gallium Arsenides;
- Junction Diodes;
- Schottky Diodes;
- Tantalum;
- Thermal Resistance;
- Fabrication;
- Frequency Multipliers;
- High Temperature Environments;
- Oxide Films;
- Power Efficiency;
- Electronics and Electrical Engineering