Memory circuits with MNOS transistors
Abstract
A description is given of the circuit and the principles of operation of an MNOS memory with partial coding. Operational processes involving the storage transistors during writing, erasing, and reading are investigated. The design of a 512-bit storage unit is discussed along with aspects of operation and experimental results. Tests conducted with the storage unit show its satisfactory performance. Advantages and drawbacks for the MNOS memory unit are considered.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1975
- Bibcode:
- 1975SiFoE...4..213H
- Keywords:
-
- Computer Storage Devices;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Transistor Circuits;
- Data Storage;
- Gates (Circuits);
- Integrated Circuits;
- Network Synthesis;
- Nitrides;
- Substrates;
- Electronics and Electrical Engineering