The mechanism of r.f. spike burn-out in Schottky barrier microwave mixers
Abstract
It is established that r.f. spike burnout in Schottky barrier microwave mixers is caused by localised heating to a temperature in excess of a critical value dependent on the metal used to form the barrier. By a suitable choice of metal, devices have been made which can withstand spike energies in excess of 1 erg. There seems no reason why advances in manufacturing technology should not improve this performance.
- Publication:
-
Solid State Electronics
- Pub Date:
- April 1975
- DOI:
- 10.1016/0038-1101(75)90089-1
- Bibcode:
- 1975SSEle..18..343G
- Keywords:
-
- Microwave Circuits;
- Mixing Circuits;
- Noise Temperature;
- Radio Frequency Heating;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Ambient Temperature;
- Circuit Reliability;
- Critical Temperature;
- Electrical Faults;
- Electron Microscopes;
- Heat Treatment;
- Mixers;
- Nickel;
- Signal Mixing;
- Silicon Junctions;
- Temperature Effects;
- Electronics and Electrical Engineering