Sub-nanosecond metal-oxide-semiconductor pressure switch for the terapascal range
Abstract
A solid-state sensor has been developed to give a signal risetime of 1 nsec in the TPa pressure range. For applications requiring a high signal-to-noise ratio, the sensor is operated reliably in the switch mode with a 50-V bias voltage. The pressure sensor can also be operated in the shock-induced polarization mode giving 2-nsec FWHM signals with 0.6-V amplitude.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- September 1975
- DOI:
- Bibcode:
- 1975RScI...46.1241K
- Keywords:
-
- Metal Oxide Semiconductors;
- Pressure Sensors;
- Pressure Switches;
- Signal To Noise Ratios;
- Time Response;
- Amorphous Materials;
- Dielectrics;
- Rankine-Hugoniot Relation;
- Shock Fronts;
- Shock Wave Propagation;
- Silicon Dioxide;
- Thin Films;
- Instrumentation and Photography