Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
Abstract
We have observed a peak in the conductivity-versus-gate-voltage curves for n-channel silicon metal-oxide-semiconductor field-effect-transistor devices containing large oxide-charge densities, 4.7×1011 cm-2<=Nox<=1.1×1012 cm-2. This peak is interpreted as an oxide-charge-induced impurity level within the lowest sub-band tail. It is found that the impurity level contains one electron state for each oxide charge situated at the Si-SiO2 interface.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 1975
- DOI:
- 10.1103/PhysRevLett.34.1435
- Bibcode:
- 1975PhRvL..34.1435H