Noise properties of IMPATT devices
Abstract
A study was conducted: to investigate the noise properties of IMPATT diodes as a function of device structure, material parameters and operating conditions; to determine the optimum noise performance which is achievable for IMPATT diodes when they are used as oscillators and amplifiers; to obtain an improved physical understanding of noise and its relationship to other important nonlinear properties such as the dc-to-RF conversion efficiency and RF power generation of IMPATT devices; and to derive important design and operating criteria regarding noise, efficiency, and power for oscillator and amplifier applications using IMPATT diodes. To achieve these goals, a comprehensive study of the noise properties of IMPATT diodes was carried out.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1975
- Bibcode:
- 1975PhDT........64C
- Keywords:
-
- Avalanche Diodes;
- Noise Intensity;
- Power Efficiency;
- Direct Current;
- Gallium Arsenides;
- Noise Generators;
- Performance Tests;
- Electronics and Electrical Engineering