Recent Infrared Detector Developments for Future Remote Sensor Applications
Abstract
Molecular beam epitaxy has been applied as a technique for growing low carrier concentration, single crystal thin films of lead-tin-telluride suitable for fabrication of infrared detect-ors in the wavelength region of 3 to 14 um. Lead-tin-tellur-ide photodiode detectors with background-limited performance in the 8 to 14 pm band at 77°K have been fabricated. Twenty-five element linear arrays of lead-tin-telluride detect-ors have been fabricated and flip-chip bonded to an alumina substrate.
- Publication:
-
Optical Engineering
- Pub Date:
- August 1975
- DOI:
- 10.1117/12.7971844
- Bibcode:
- 1975OptEn..14..351M
- Keywords:
-
- Infrared Detectors;
- Lead Tellurides;
- Remote Sensors;
- Technology Assessment;
- Thin Films;
- Tin Tellurides;
- Aluminum Alloys;
- Carrier Mobility;
- Epitaxy;
- Metal Bonding;
- Molecular Beams;
- Photodiodes;
- Production Engineering;
- Single Crystals;
- Substrates;
- Technological Forecasting;
- Instrumentation and Photography