Ion-doped layer as a new material for hologram recording
Abstract
Silicon and germanium single crystals subjected to bombardment by fast N-14, O-16, Ne-20, P-31, Ar-40, or Sb-121 ions are shown to be well suited for recording and storing optical information. Using the proper exposure conditions, it is possible to precisely control the parameters of the amorphous layer that builds up at the single crystal surface.
- Publication:
-
Optika i Spektroskopiia
- Pub Date:
- May 1975
- Bibcode:
- 1975OpSp...38.1031S
- Keywords:
-
- Holography;
- Ion Implantation;
- Optical Memory (Data Storage);
- Photographic Recording;
- Semiconductors (Materials);
- Amorphous Semiconductors;
- Germanium;
- Gratings (Spectra);
- Infrared Spectra;
- Silicon;
- Single Crystals;
- Surface Layers;
- Instrumentation and Photography