A reflection-type phase modulator with fast switching pin-diodes
Abstract
The described modulator has switching times of less than 1 nsec, an insertion loss of less than 0.5 dB, and a 500 MHz modulator bandwidth. The modulator uses a pin-diode which is fabricated by simultaneously diffusing donors and acceptors into a low doped thin silicon film. The process makes it possible to obtain steep junction gradients. The optimal settings of the coaxial tuning elements are comparatively insensitive to the diode characteristics.
- Publication:
-
Nachrichtentechnische Zeitschrift
- Pub Date:
- September 1975
- Bibcode:
- 1975NacZe..28..319S
- Keywords:
-
- Junction Diodes;
- P-I-N Junctions;
- Phase Modulation;
- Signal Reflection;
- Switching Circuits;
- Time Response;
- Bandwidth;
- Frequency Response;
- Insertion Loss;
- Millimeter Waves;
- Modulators;
- Phase Error;
- Thin Films;
- Tuning;
- Electronics and Electrical Engineering