The GaAs-Schottky-gate-FET as a psec switch in the medium power range
Abstract
The suitability of GaAs-MeSFETs for digital Gbit modulation applications is investigated. Dimensioning relations for psec-GaAs-MeSFETs are discussed, taking into account a one-dimensional theory considered by Hower and Bechtel (1973). Attention is also given to the requirements of technology and questions related to power-switch applications.
- Publication:
-
Nachrichtentechnische Zeitschrift
- Pub Date:
- September 1975
- Bibcode:
- 1975NacZe..28..287K
- Keywords:
-
- Digital Systems;
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Schottky Diodes;
- Switching Circuits;
- Broadband Amplifiers;
- Impulse Generators;
- Rc Circuits;
- Semiconductor Lasers;
- Transistor Logic;
- Electronics and Electrical Engineering