The simulation of n-channel field-effect transistors in the circuit analysis of CMOS circuits
Abstract
A simple model is proposed for deriving the current-voltage relationship of an MOS transistor. It is assumed that the saturation voltage varies linearly with the gate voltage. A description is given of the characteristics of an MOS transistor with variable parameters and details regarding the saturation constant are considered. The model used is found to have characteristics of general validity. Complete agreement of computed values for the saturation current with experimental data can be obtained by introducing a functional dependence of the saturation constant on the gate voltage.
- Publication:
-
Nachrichtentechnische Zeitschrift
- Pub Date:
- April 1975
- Bibcode:
- 1975NacZe..28..133M
- Keywords:
-
- Computerized Simulation;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Network Analysis;
- Volt-Ampere Characteristics;
- Gates (Circuits);
- Linear Systems;
- Mathematical Models;
- N-Type Semiconductors;
- Electronics and Electrical Engineering