A study of the nonlinearity of high-frequency bipolar transistors
Abstract
A two-dimensional model involving high current density phenomena (Kirk and crowding effects) is proposed for studying the nonlinearity of high-frequency bipolar transistors. In this model, the nonlinear characteristics of the frontal and lateral zones are expanded into a three-term Taylor series. A digital computer program is developed to determine the second and third harmonic distortion terms and intermodulation distortions. Theoretical results are found to be in good agreement with experimental findings. Diagrams are plotted to determine distortion versus operating conditions (frequency, bias current, load resistance) and physical and dimensional parameters. These data serve as a guide to the design and use transistors exhibiting optimal linearity characteristics within the limits of tradeoffs necessary to meet the specifications.
- Publication:
-
L'Onde Electrique
- Pub Date:
- October 1975
- Bibcode:
- 1975LOEle..55..427G
- Keywords:
-
- Bipolar Transistors;
- Harmonic Generations;
- Mathematical Models;
- Nonlinearity;
- Computer Techniques;
- Current Density;
- Distortion;
- Electrical Impedance;
- Electrical Resistance;
- Graphs (Charts);
- High Frequencies;
- Taylor Series;
- Two Dimensional Bodies;
- Two Dimensional Models;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering