Microwave performance of GaAs-Schottky barrier gate FETs
Abstract
Models for the operational analysis of GaAs FETs reported by Lehovec and Zuleeg (1970) have been improved by approximating the velocity-electric field saturation characteristics with the aid of a piecewise linear method. The improved model was used to clarify the relation between the material and geometrical device parameters and the elements of the equivalent circuits. An optimum design method for GaAs FETs was developed. The characteristics of GaAs FETs which were designed with the aid of the new method are discussed.
- Publication:
-
Electronics Communications of Japan
- Pub Date:
- December 1975
- Bibcode:
- 1975JElCo..23.1182S
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Performance Prediction;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Design Analysis;
- Electric Fields;
- Electron Energy;
- Equivalent Circuits;
- Gates (Circuits);
- Network Analysis;
- Electronics and Electrical Engineering