Electrical and radiation characteristics of MOS/SOS linear devices

Experimental data on the electrical performance and response to neutron bombardment of MOS/SOS devices indicate excellent performance and high-quality linear functions, with a hardness to neutron radiation superior to that of now available equivalent low-power devices. Simple MOS grounded-source amplifiers with various resistive loads were tested in building-block linear integrated circuits. Statistical data on the electrical performance parameters are presented. The problem of the kink effect in n-channel SOS devices, and some possible ways of coping with it, are discussed.