An MOS modeling hierarchy including radiation effects
Abstract
A hierarchy of modeling procedures has been developed for MOS transistors, circuit blocks, and integrated circuits which include the effects of total dose radiation and photocurrent response. The models were developed for use with the SCEPTRE circuit analysis program, but the techniques are suitable for other modern computer aided analysis programs. The modeling hierarchy permits the designer or analyst to select the level of modeling complexity consistent with circuit size, parametric information, and accuracy requirements. Improvements have been made in the implementation of important second order effects in the transistor MOS model, in the definition of MOS building block models, and in the development of composite terminal models for MOS integrated circuits.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1975
- DOI:
- 10.1109/TNS.1975.4328177
- Bibcode:
- 1975ITNS...22.2611A
- Keywords:
-
- Equivalent Circuits;
- Field Effect Transistors;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Computer Aided Design;
- Mathematical Models;
- Performance Prediction;
- Photoelectric Effect;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering