Gunn device Gigabit rate digital microcircuits
Abstract
Analysis of monolithic planar integration of GaAs Gunn devices for Gigabit microcircuits is carried out, giving estimates of maximum pulse rate, power consumption, and package density. Theoretical limits are determined for three different kinds of domain control: by separate Schottky-barrier diode, by MESFET, and by Schottky-barrier gate on the channel of the Gunn device. Calculations are compared with values determined from experimental integrated circuits based on these three domain control techniques.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- February 1975
- DOI:
- 10.1109/JSSC.1975.1050547
- Bibcode:
- 1975IJSSC..10....2M
- Keywords:
-
- Digital Systems;
- Gallium Arsenides;
- Gunn Diodes;
- Integrated Circuits;
- Microminiaturization;
- Pulse Rate;
- Equivalent Circuits;
- Field Effect Transistors;
- Negative Resistance Devices;
- Planar Structures;
- Schottky Diodes;
- Trigger Circuits;
- Electronics and Electrical Engineering