The active medium propagation device
Abstract
A description is given of a novel microwave solid-state device in which the RF signal propagates transverse to the direction of electron flow. The device utilizes the active medium propagation concept. Two different device types are studied. The results obtained with one type appears to verify the work of Haus (1973) who predicts lower noise performance for a traveling-wave Gunn device than for a Gunn diode.
- Publication:
-
IEEE Proceedings
- Pub Date:
- August 1975
- Bibcode:
- 1975IEEEP..63.1253F
- Keywords:
-
- Gallium Arsenides;
- Gunn Effect;
- Microwave Transmission;
- N-Type Semiconductors;
- Semiconductor Devices;
- Transmission Lines;
- Noise Spectra;
- Propagation Modes;
- Transit Time;
- Traveling Waves;
- Volt-Ampere Characteristics;
- Wave Propagation;
- Electronics and Electrical Engineering