Acoustic-surface-wave convolver on epitaxial gallium arsenide
Abstract
A meander-gate field-effect transistor on epitaxial GaAs is used as an acoustic-surface-wave convolver. A bilinear coefficient as high as 0.0002 per mW has been measured at 260 MHz. The active area is only 1.8 mm long and the acoustic beam width is 0.7 mm.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1975
- DOI:
- 10.1049/el:19750468
- Bibcode:
- 1975ElL....11..614S
- Keywords:
-
- Field Effect Transistors;
- Signal Processing;
- Surface Acoustic Wave Devices;
- Epitaxy;
- Gallium Arsenides;
- Piezoelectricity;
- Semiconductors (Materials);
- Electronics and Electrical Engineering