Fast photoluminescence modulation for optoelectronic applications
Abstract
The principle of photoluminescence (p.l.) intensity modulation is demonstrated with near-bandgap p.l. of n GaAs bulk material. The p.l. is modulated by a semitransparent Schottky barrier. Preliminary experimental results show the feasibility of fast p.l. pulse modulation (at 1 Mbit/sec) and the applicability of this principle to optical signal transmission.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1975
- DOI:
- Bibcode:
- 1975ElL....11..490L
- Keywords:
-
- Electro-Optics;
- Light Modulation;
- Optical Communication;
- Photoluminescence;
- Schottky Diodes;
- Gallium Arsenides;
- Laser Applications;
- Pulse Modulation;
- Electronics and Electrical Engineering