Comparison of boron and neon damage effects in boron ion-implanted resistors
Abstract
Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10,000 per sq cm range were obtained with low temperature and voltage sensitivities and good dc isolation.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1975
- DOI:
- 10.1049/el:19750375
- Bibcode:
- 1975ElL....11..484M
- Keywords:
-
- Integrated Circuits;
- Ion Implantation;
- Resistors;
- Silicon Junctions;
- Boron;
- Neon;
- Radiation Damage;
- Electronics and Electrical Engineering