Tunable X band GaAs F.E.T. amplifier.
Abstract
The design of a frequency-tunable X band amplifier using GaAs Schottky field-effect transistors is described. By using a broadband input matching circuit and a frequency-tunable output matching circuit, the gain of 7 + or - 0.5 dB obtained from a single-stage amplifier may be varied from 8 to 10 GHz, with corresponding terminal VSWR, over any 600 MHz bandwidth, better than 2:1. A single-stage amplifier gives a noise figure of 4.7 dB with a gain of 5.8 dB, and a two-stage amplifier a 6.0 dB noise figure with 12.5 dB power gain.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1975
- DOI:
- 10.1049/el:19750363
- Bibcode:
- 1975ElL....11..474S
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Tuning;
- Frequency Control;
- Impedance Matching;
- Noise Intensity;
- Power Gain;
- Schottky Diodes;
- Superhigh Frequencies;
- Electronics and Electrical Engineering