Transit-time-induced microwave negative resistance in Ga1-xAlxAs-GaAs heterostructure diodes
Abstract
- Publication:
-
Electronics Letters
- Pub Date:
- September 1975
- DOI:
- 10.1049/el:19750351
- Bibcode:
- 1975ElL....11..457S
- Keywords:
-
- Gallium Arsenides;
- Junction Diodes;
- Microwave Circuits;
- Negative Resistance Devices;
- Transit Time;
- Aluminum Compounds;
- Electron Diffusion;
- Semiconductor Junctions;
- Shot Noise;
- Space Charge;
- Electronics and Electrical Engineering