High-speed high-power 1.06-micron gallium-indium-arsenide light-emitting diodes
Abstract
The preparation of 1.06-micron gallium-indium-arsenide light-emitting diodes is described. Power outputs of 1 mW at 55 mA dc and pulsed power outputs of up to 0.5 W have been obtained. Attenuattion/modulation experiments have shown 3 dB attenuation at 110 MHz. The use of such diodes in fiber-optic communication systems is suggested.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1975
- DOI:
- Bibcode:
- 1975ElL....11..157M
- Keywords:
-
- Emission Spectra;
- Gallium Arsenides;
- Indium Arsenides;
- Infrared Radiation;
- Light Emitting Diodes;
- Optical Waveguides;
- Fiber Optics;
- High Speed;
- Light Modulation;
- Optical Communication;
- Transmission Loss;
- Wave Attenuation;
- Electronics and Electrical Engineering