Analysis of the small signal behaviour of MOStransistors using the Fast Fourier Transform
Abstract
The switching behavior of a pMOStransistor is analyzed with a computer program using the Fast Fourier Transform (FFT) as subroutine. With the known output signal of a linear system, the small behavior of a MOSFET in this case, the locus of the complex samples in the frequency domain can be computed. In this way a simple small signal equivalent circuit of a MOSFET could be derived using an inductance to simulate the delay caused by the channel formation, and which supplies the same results as a physical model described earlier.
 Publication:

Archiv Elektronik und Uebertragungstechnik
 Pub Date:
 January 1975
 Bibcode:
 1975ArElU..29...20B
 Keywords:

 Fast Fourier Transformations;
 Field Effect Transistors;
 Metal Oxide Semiconductors;
 Network Analysis;
 Signal Analysis;
 Switching;
 Computer Programs;
 Equivalent Circuits;
 Inductance;
 PType Semiconductors;
 Subroutines;
 Time Lag;
 Electronics and Electrical Engineering