Secondary ion mass spectrometry and its application to thin film and surface analysis
Abstract
Secondary ion mass spectrometry (SIMS) is based on the bombardment of solids by ions and subsequent analysis of the ions sputtered from the target material. The principle of quantitative analysis and some important parameters are presented. A short survey of the different models proposed to explain the emission of secondary ions is then given. The different SIMS modes are reviewed and some examples from practice of SIMS are presented to illustrate the wide range of the applicability of the method.
- Publication:
-
Acta Electronica
- Pub Date:
- January 1975
- Bibcode:
- 1975AcEle..18...51W
- Keywords:
-
- Ion Emission;
- Mass Spectroscopy;
- Secondary Emission;
- Surface Properties;
- Thin Films;
- Ion Irradiation;
- Metal Surfaces;
- Oxide Films;
- Spectroscopic Analysis;
- Sputtering;
- Work Functions;
- Instrumentation and Photography