Millimeter wave Gunn devices
Abstract
Gunn (transferred electron) components are proving to be cost effective, low noise, reliable, wide bandwidth, solid state mm-wave sources and amplifiers suitable for many system applications. While FETs and bipolar transistors appear to be limited to below 18 GHz and IMPATTs have noise, bandwidth and operational limitations, Gunn effect components show excellent overall performance in the mm-wave range up to 75 GHz. Projection of laboratory results indicate further advances in power, frequency, noise and bandwidth. In this paper, the following topics relating to mm-wave Gunn effect devices and components will be discussed: applications; device design and characterization; oscillator circuit approaches and performance; reflection amplifiers; reliability; and expected future developments.
- Publication:
-
Western Electronic Show and Convention
- Pub Date:
- 1974
- Bibcode:
- 1974wesc.proc....3G
- Keywords:
-
- Gunn Diodes;
- Microwave Equipment;
- Millimeter Waves;
- Negative Resistance Devices;
- Solid State Devices;
- Frequency Response;
- Microwave Amplifiers;
- Microwave Oscillators;
- Network Synthesis;
- Technology Utilization;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering