Control of electrostatic discharge damage to semiconductors
Abstract
Mechanisms of semiconductor failure caused by electrostatic discharge through the device are described along with corresponding susceptibility criteria for three specific examples including an N-channel junction FET, an internally compensated operational amplifier IC die, and a low-power TTL hex inverter IC. Test techniques and results are presented that were used to correlate damage thresholds to field failures. A discharge circuit formulated from empirical test data and pertinent literature is discussed. Survey data indicate that stored charges sufficient to produce part damage are present at all levels of production flow. Recommendations are offered for reducing electrostatic discharge exposure of parts during handling, installation, and test.
- Publication:
-
Reliability Physics 1974
- Pub Date:
- 1974
- Bibcode:
- 1974reph.proc..304F
- Keywords:
-
- Electric Discharges;
- Electrical Faults;
- Electrostatic Charge;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Semiconductor Devices;
- Aerospace Engineering;
- Circuit Reliability;
- Component Reliability;
- Integrated Circuits;
- Metallizing;
- Transistor Circuits;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering